GTS-2041616 ACTIVE GOODS

Supply Of Transistor Fet N Chan Uf 28100v,ic Metalic 7812,circuit Breaker 24v Dc 32a Type Tiny Trip,blower Dc 24v Dc 100mp Max 2650rpm 34.4 Vfm Type Kde2408pts1 6,flux Nc 559 Asm Uv Tpf,bridge Rectifier Gsib1560 Or Equivalent,micro Circuit Memory Fpga 2 Programmed,micro Circuit Memory Fpga 1 Programmed,micro Circuit Memory Eprom Programmed 2.0,ssd Ic Dgtl Gate 74hc 08,micro Circuit Digital Type Fx 806al3,micro Circuit Digital Type Fx 805 Ls,transistor Si Lp Pnp Type Bcx71j,transistor Smbt 2222a Smd,micro Circuit Spst Analog Sw Type Max 4626 Euk-t,switch Rotary 10 Pin Bcd Ref 513374 10,micro Circuit Linear Type Lmc 662,hmc Thk Fltr Bpass Bmc 1527,transistor Field Effect N Channel Type Du 2820s,resistance 22k Ohm 2 Watt,ic Witch Analog Dual Spst Max47,resistance 4.7k 0.5w,resistance 1e 0.5w,res 47 Ohms 1 Oblique 4 W,ultra Fast Rectifier Diode Uf 4007,diode Zener 12 V 1w 1n4742a,diode In 4148,resistance Mfr 6.8 K Ohm,resistance Mfr 220 Ohm,resistance Mfr 1k 5 Ohm,resistance Mfr 1k Ohm Quantity: 236

Indian Army
ID GTS-2041616
Estimated Value
Refer Document
Closing Date
03 Oct 2026
6 Days Left
Location
JAMMU AND KASHMIR
BUDGAM
Overview
Supply Of Transistor Fet N Chan Uf 28100v,ic Metalic 7812,circuit Breaker 24v Dc 32a Type Tiny Trip,blower Dc 24v Dc 100mp Max 2650rpm 34.4 Vfm Type Kde2408pts1 6,flux Nc 559 Asm Uv Tpf,bridge Rectifier Gsib1560 Or Equivalent,micro Circuit Memory Fpga 2 Programmed,micro Circuit Memory Fpga 1 Programmed,micro Circuit Memory Eprom Programmed 2.0,ssd Ic Dgtl Gate 74hc 08,micro Circuit Digital Type Fx 806al3,micro Circuit Digital Type Fx 805 Ls,transistor Si Lp Pnp Type Bcx71j,transistor Smbt 2222a Smd,micro Circuit Spst Analog Sw Type Max 4626 Euk-t,switch Rotary 10 Pin Bcd Ref 513374 10,micro Circuit Linear Type Lmc 662,hmc Thk Fltr Bpass Bmc 1527,transistor Field Effect N Channel Type Du 2820s,resistance 22k Ohm 2 Watt,ic Witch Analog Dual Spst Max47,resistance 4.7k 0.5w,resistance 1e 0.5w,res 47 Ohms 1 Oblique 4 W,ultra Fast Rectifier Diode Uf 4007,diode Zener 12 V 1w 1n4742a,diode In 4148,resistance Mfr 6.8 K Ohm,resistance Mfr 220 Ohm,resistance Mfr 1k 5 Ohm,resistance Mfr 1k Ohm Quantity: 236 Delivery/work location: Budgam, Jammu and Kashmir. Bid closing date: 03-10-2026.
Tender Information
Tender No GTS-2041616 Tender Type
Contract Type Category Goods
Offer Validity — EMD Required ₹0
Document Cost ₹0 Submission Time 10:00:00
Timeline
Published
18 Sep 2026
Bid Closing
03 Oct 2026
10:00:00
Issuing Authority
Organisation
Indian Army
Department ID
21
JAMMU AND KASHMIR , BUDGAM
Fees & EMD
EMD Amount ₹0
Tender Fee ₹0
Offer Validity —
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